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Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor - ScienceDirect
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UCC27712: Ringing - Gate Drive or Switch Node? - Power management forum - Power management - TI E2E support forums
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Layout of proposed asymmetric devices. A ring-shaped gate structure is... | Download Scientific Diagram
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TPS40170: Using Faster FETs results in gate drive oscillations. - Power management forum - Power management - TI E2E support forums
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Figure 3 from A switching ringing suppression scheme of SiC MOSFET by Active Gate Drive | Semantic Scholar
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